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Final Program


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Jonathan D. Lee, Ph.D.

Application Scientist
Gatan, Inc.
Pleasanton, California, United States

Jonathan Lee, PhD in Physics with a background in researching and characterizing defect levels in semiconductor materials including wide bandgap materials such as gallium oxide and gallium nitride using CL spectrometery and time-resolved CL. Currently is an application scientist working with Gatan for SEM techniques including CL and EDS with about 4 years professional experience in the field demonstrating the reach of CL in determination of material properties and, more recenlty, combining EDS and BSE results to quantitatively estimate Lithium content in alloys and compounds.

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Presentation(s):